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Daily Program

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Monday 03/04 Tuesday 04/04 Wednesday 05/04 Thursday 06/04

07:30 Registration
08:30 Opening Session Rolf Böhme Saal
Chair: Ralf Preu (Fraunhofer ISE)
Ralf Preu, Fraunhofer ISE
08:45 Session 1: Tandem Cells Rolf Böhme Saal
Chair: Christophe Ballif (EPFL STI IMT-NE EPFL) and Peter Wilshaw (University of Oxford)
23.6%-Efficient Monolithic Perovskite/Silicon Tandem Cell
Zhengshan Yu, Arizona State University
Si-based Dual Junction Solar Cells Enabling 1-sun Efficiency Above 30%
Christophe Allebé, CSEM
Crystalline Silicon Solar Cell with Front and Rear Poly-Si Passivating Contacts as Bottom Cell in Hybrid Tandems
Stefan Luxembourg, ECN Solar Energy
Monolithic III-V//Si Tandem Solar Cells with > 30% Efficiency Enabled by Wafer-bonding
Romain Cariou, Fraunhofer ISE
09:45 Coffee Break
10:15 Session 2: Modules Rolf Böhme Saal
Chair: Romain Couderc (CETHIL/Apollon Solar) and Ulrich Eitner (Fraunhofer ISE)
Minimizing the Potential Induced Degradation Through Polarization in PV Modules by Modification of the Dielectric Antireflection and Passivation Stack
Gaby Janssen, ECN-Solar Energy
Potential Induced Degradation of n-Type Crystalline Silicon Solar Cells
Soohyun Bae, Korea University
Nondestructive Quantitative Analysis of Single Solar Cells in Modules
Jan Bauer, Max Planck Institute of Microstructure Physics
System Performance Loss due to LeTID
Friederike Kersten, Hanwha Q Cells GmbH
Ultra-soft Wires for Direct Soldering on Finger Grids of Solar Cells
Li Carlos Rendler, Fraunhofer ISE
11:30 Lunch Break
12:30 Poster Session 1
Optical and Electrical Characterization of Poly-Si/SiOx Contacts and their Implications on Cell Design
Frank Feldmann, Fraunhofer ISE
Aspects of Bifacial Cell Efficiency
Gaby Janssen, ECN-Solar Energy
CELLO Photo-impedance-spectroscopy on PERC Solar Cells: Separation of Bulk and Rear Surface Defects
Andreas Schütt, CELLOscan GbR
Comparison of Line Wise PL Imaging and Area Wise PL Imaging
Hannes Höffler, Fraunhofer ISE
Temperature Dependent Photoluminescence Imaging Calibrated by Photoconductance Measurements
Halvard Haug, Institute for Energy Technology
Modeling of Recombination Strength at Grainboundaries after Phosphorus Diffusion Gettering and the Effect of Hydrogen Passivation
Marie Syre Wiig, Institute for Energy Technology
Extraction of Individual Components of Series Resistance Using TCAD Simulations Meeting the Requirements of 2- and 3-dimensional Carrier Flow of PERX and IBC Solar Cells
Gabriel Micard, University of Konstanz
Investigation of Phosphorous Diffusion Gettering in High Performance Multicrystalline Silicon Using Laser Ablation ICPMS
Sagnik Chakraborty, NUS Graduate School for Integrative Sciences and Engineering
Electrical and Optical Simulation of nPERT Solar Cells with Epitaxially Grown Emitters
Miha Filipic, imec
Predicting Bulk Lifetime Values by Applying Wet Chemistry H-termination for Inline Quality Control of Silicon Wafers
Saed Al-Hajjawi, Fraunhofer ISE
Study of the Bulk Lifetime and Material Saturation Current Density of Different P-type Monocrystalline Silicon Materials
Franziska Wolny, Solar World Innovations GmbH
On the Meaning(fullness) of the Intensity Unit ‘suns’ in Light Induced Degradation Experiments
Axel Herguth, University of Konstanz
Quantifying and Controlling the Radiative Emissivity of Crystalline Silicon Solar Cells
Alexander Mellor, Imperial College London
Advances in PassDop Technology: Recombination and Optics
Bernd Steinhauser, Fraunhofer ISE
Intricacies of Super Acid Passivation for Determining the Bulk Lifetime in Crystalline Silicon Wafers
Nicholas Grant, University of Warwick
Atomic Layer Deposited Dielectric and/or Semiconducting Oxide Multilayers for Crystalline Silicon Surface Passivation
Jagannath Panigrahi, National Physical Laboratory
Efficient Surface Passivation of Black Silicon Using Spatial ALD
Ismo T. S. Heikkinen, Beneq Oy
ONO for Silicon Solar Cell
Teng Kho, Australian National University
Investigation of Nano-scaled Quasi Pyramid Texture for HIT Solar Cells Using n-Type High Performance Multi-crystalline Silicon
Song Zhang, NTNU
A Comparison Study of Boron Emitter Passivation by Silicon Dioxide and a PECVD Silicon Nitride Stack
Barbora Mojrova, UMEL FEKT VUT v Brne
Parameter Influences on Etching Silicon Wafers with HF-HCl-Cl2-Mixtures
André Stapf, TU Bergakademie Freiberg
Towards an Optimum Silicon Heterojunction Solar Cell Configuration for High Temperature and High Light Intensity Environment
Amir Abdallah, Qatar Environment and Energy Research Institute
Analysis of Contact Recombination at Rear Local Back Surface Field Via Boron Laser Doping and Screen-printed Aluminum Metallization on p-Type PERC Solar Cells
Yuka Tomizawa, Teijin Ltd.
Defect Equilibration in Silicon Heterojunction Solar Cells
Loris Barraud, CSEM
Boron-diffusion During Formation of Passivating Hole-contacts
Franz-Josef Haug, EPFL
Effective Passivation of Crystalline Silicon Surfaces by Ultrathin Atomic-layer-deposited TiOx Layers
Valeriya Titova, Institut für Solarenergieforschung GmbH
Dependence of n-cSi/MoOx Heterojunction Performance on cSi Doping Concentration
Hisham Nasser, The Center for Solar Energy Research and Applications (GÜNAM)-Middle East Technical University (METU)
Solder Joint Stability Study of Wire-based Interconnection Compared to Ribbon Interconnection
Johann Walter, Fraunhofer Institute for Solar Energy Systems ISE
Thermomechanical Stress Analysis of PV Module Production Processes by Raman Spectroscopy and FEM Simulation
Andreas Joachim Beinert, Fraunhofer ISE
Investigation of Efficiency for PID-affected Module at Non-standard Conditions
Hong Yang, Xi’an Jiaotong University
Towards Short Circuit Current Densities of 43 mA/cm² with Microcrystalline Silicon Carbide in Heterojunction Solar Cells
Manuel Pomaska, Forschungszentrum Jülich GmbH, IEK-5 Phtovoltaik
Fabrication of Si Tunnel Diodes for c-Si Based Tandem Solar Cells Using Proximity Rapid Thermal Annealing
Alain Fave, INL
Hybrid Front / Rear Contacted Solar Cell
Olindo Isabella, Delft University of Technology
The Role of Cu in Microstructural Root Cause Diagnostics of Light Induced Degradation in Multi-crystalline PERC Solar Cells
Tabea Luka, Fraunhofer Center for Silicon Photovoltaics CSP
The Influence of Residence Time on Thermal Decomposition of Monosilane
Guro Marie Wyller, IFE
Bulk and Surface Instabilities in Boron Doped Float-zone Samples During Light Induced Degradation Treatments
David Sperber, University of Konstanz
Grain Boundaries and Dislocations in Si-bricks: Inline Characterization on As-cut Wafers
Theresa Strauch, Fraunhofer ISE
Controlling Surface Contamination Issues in the Fabrication Environment of High Efficiency Crystalline Silicon-based Homojunction Solar Cells
Hélène Lignier, CEA
New Methods to Evaluate Cleaning Processes by Detecting the Particle Load on Surfaces of Diamond Wire Sawn Silicon Wafers
Lydia Lottspeich, Fraunhofer Technology Centre Semiconductor Materials THM
Local Optimization of Graphite Heater to Save a Power Consumption of Czochralski Si Ingot Grower for PV Application
Wooseok Nam, Woongjin Energy Co. Ltd.
Low Temperature Gettering for Improved Multicrystalline Silicon
John Murphy, University of Warwick
Growth Uniformity of Epitaxy Silicon Grown at 200 °C Using 60 MHz Very High Frequency Plasma Enhanced Vapor Phase Epitaxy
Ka-Hyun Kim, Korea Institute of Energy Research
‘Mg’nificent Electron Contacts for n-Type Silicon Solar Cells: Metal, Oxide, and Fluoride
Yimao Wan, Australian National University
Benefits of Different Process Routes for Industrial Direct Front Side Plating
Norbert Bay, RENA Technologies GmbH
Low Activity Tabbing Pastes for Passivated Surface
Yi Yang, Heraeus Precious Metals
14:00 Short Coffee Break
14:15 Invited Talk Rolf Böhme Saal
Perovskite on Silicon Tandem Cell
Henry Snaith, Oxford Photovoltaics
14:45 Session 3: PERC Cells and Passivation Rolf Böhme Saal
Chair: Jozef Szlufcik (imec) and Thorsten Dullweber (ISFH)
An Enhanced Alneal Process to Produce Surface Recombination Velocities Below 1 cms-1
Katherine A Collett, University of Oxford
Structure and Composition of Phosphosilicate Glass Layers Formed by POCl3 Diffusion
Sabrina Werner, Fraunhofer ISE
Passivation of Black Silicon Phosphorus Emitters with ALD SiO2/Al2O3 Stacks
Toni Pasanen, Aalto University
Mass Production of p-Type Cz Silicon Solar Cells Approaching Average Stable Conversion Efficiencies of 22%
Fabian Fertig, Hanwha Q Cells GmbH
Development and Characterization of Multifunctional Passdop Layers for Local P+-laser Doping
Mohammad Hassan Norouzi, Fraunhofer ISE
Insights into the Reliability of Ni/Cu Plated p-PERC Silicon Solar Cells
Chi Dang, KU Leuven / imec
16:15 Coffee Break
16:45 Session 4: Modeling and Simulation Rolf Böhme Saal
Chair: Barbara Terheiden (University of Konstanz) and Brett Hallam (University of New South Wales)
The Concept of Skins for (Silicon) Solar Cell Modelling
Andreas Fell, Fraunhofer Institute for Solar Energy Systems ISE
CASSANDRA – A Tool for Analysis and Prediction of Time Resolved BO Defect Dynamic on Lifetime and Cell Level
Axel Herguth, University of Konstanz
Experimental Verification of Internal Resistance Models for PERT-type Solar Cells
Sebastian Meier, Fraunhofer ISE
Metamodeling of Numerical Device Simulations to Rapidly Create Efficiency Optimization Roadmaps of Monocrystalline Silicon PERC Cells
Sven Wasmer, Fraunhofer ISE
Accurate Opto-electrical Modelling of IBC Solar Cells Based on Poly-Si Carrier-selective Passivating Contacts
Paul Procel, TU Delft
18:30 Technical Tour

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